Paru Co., Ltd (Jeollanam-do, KR) earned U.S. Patent 7,776,764 for a technology for printing a thin film transistor (TFT) using single walled carbon nanotubes coated with dielectric substance having a thickness of several nm and thus capable of improving significantly a low on/off ratio of an existing single walled carbon nanotube TFT.
Paru Co purpose is to provide a technology of solving problems of removal of fatal metallic tube and nano capacitor formation between tubes caused when manufacturing a printed transistor using single walled carbon nanotubes through an inexpensive and simple one time process for coating polymer dielectric substance nano thin film.
Paru Co developed a method of forming a nano dielectric thin film on single walled carbon nanotubes and a method of printing a thin film transistor using the single walled carbon nanotubes coated with the dielectric thin film.
The technology provides a method of effectively coating polymer dielectric substance of nanometer thickness on single walled carbon nanotubes and prints it so as to serve as a semiconductor layer when manufacturing a thin film transistor.
It has been found that a thin film transistor with significantly improved on/off ratio can be manufactured through a coating of single walled carbon nanotubes according to Paru’s invention and a printing process using the same.
The technology includes a polymer dielectric substance that is constantly coated as a nano thin film on each of single walled carbon nanotubes at a thickness of 1 to 1 nm, more preferably 1 to 5 nm using water dispersed single walled carbon nanotubes (SWNT) and a monomolecular film of an anionic surfactant adsorbed thereto as a mold and thus the metal property of a metallic tube is not revealed and at the same time, a semiconductor tube is coated with dielectric substance which is insulation layer substance, thereby permitting the single walled carbon nanotubes to serve as a semiconductor layer in a transistor with or without a separate insulation layer.
The technology allows a coating at a constant thickness and to obtain an inexpensive and uniform coating result even in repeated coatings when coating polymer dielectric substance as a nano thin film on a surface of a carbon nanotube. The anionic surfactant is absorbed to a surface of a water dispersed single walled carbon nanotube to form monomolecular film and then monomer of polymer dielectric substance to be coated is added and thus the monomer is condensed and then polymerized on surfactant monomolecular film capable of being thermodynamically more stable to be constantly grown to the polymer dielectric thin film with a nano thickness.
Paru Co developed a method of forming a nano dielectric thin film on single walled carbon nanotubes and a method of printing a thin film transistor using the single walled carbon nanotubes coated with the dielectric thin film.
The technology provides a method of effectively coating polymer dielectric substance of nanometer thickness on single walled carbon nanotubes and prints it so as to serve as a semiconductor layer when manufacturing a thin film transistor.
It has been found that a thin film transistor with significantly improved on/off ratio can be manufactured through a coating of single walled carbon nanotubes according to Paru’s invention and a printing process using the same.
The technology includes a polymer dielectric substance that is constantly coated as a nano thin film on each of single walled carbon nanotubes at a thickness of 1 to 1 nm, more preferably 1 to 5 nm using water dispersed single walled carbon nanotubes (SWNT) and a monomolecular film of an anionic surfactant adsorbed thereto as a mold and thus the metal property of a metallic tube is not revealed and at the same time, a semiconductor tube is coated with dielectric substance which is insulation layer substance, thereby permitting the single walled carbon nanotubes to serve as a semiconductor layer in a transistor with or without a separate insulation layer.
The technology allows a coating at a constant thickness and to obtain an inexpensive and uniform coating result even in repeated coatings when coating polymer dielectric substance as a nano thin film on a surface of a carbon nanotube. The anionic surfactant is absorbed to a surface of a water dispersed single walled carbon nanotube to form monomolecular film and then monomer of polymer dielectric substance to be coated is added and thus the monomer is condensed and then polymerized on surfactant monomolecular film capable of being thermodynamically more stable to be constantly grown to the polymer dielectric thin film with a nano thickness.
According to inventors Gyoujin Cho, Sun Hee Kim, Eun Kyung Kim and Min-hun Jung the method of preparing an ink for printing a semiconductor layer of a thin-film transistor, is comprised of the steps of: a) preparing a water dispersion comprising a surfactant and a plurality of single walled carbon nanotubes wherein the surfactant is adsorbed on the single walled carbon nanotubes and is capable of acting as a template for at least one of a plurality of monomers of a polymer dielectric substance; b) adding the plurality of monomers of the polymer dielectric substance to the water dispersion and agitating it; and c) polymerizing the added plurality of monomers such that the single walled carbon nanotubes having the surfactant adsorbed thereon are coated with a thickness of the polymer dielectric substance, wherein the thickness of the polymer dielectric substance coated on the surface of the single walled carbon nanotubes is controlled by the addition amount of the monomer of the polymer dielectric substance added to the water dispersion, wherein the ink is formed
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