Korea Institute of Science and Technology (Seoul, KR) in U.S. Patent 7,776,445 discloses a graphene hybrid material and a method for preparing the graphene hybrid material. The method for preparing the graphene hybrid material uses a chemical vapor deposition (CVD) technique.
According to inventors Jae Kap Lee, Seung Cheol Lee, Phillip John, Wook Seong Lee and Jeon Kook Lee, the graphene hybrid material comprises: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.
Graphene is called a single hexagonal carbon layer, that is, a single plane layer of graphite. It is known that this graphene has more excellent physical properties than a carbon nanotube (CNT).
In Korea Institute of Science and Technology’s graphene hybrid material, the graphene is chemically bonded with a matrix (or epitaxially grown) and is vertically oriented on the matrix.
The method for preparing the graphene hybrid material consists of epitaxially growing layers of graphene such that the layers of graphene are vertically oriented to a matrix along lattice planes disconnected on a surface of the matrix using a chemical vapor deposition (CVD) method in which the matrix provided on the surface thereof with the disconnected lattice planes where the layers of graphene are epitaxially grown is brought into contact with hydrocarbon and hydrogen gases.
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