Nanosys, Inc. (Palo Alto, CA) earned U.S. Patent 7,701,428 for displays using nanowire transistors. In particular, liquid crystal displays using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics may be fabricated.
A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor.
Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors may be manufactured using the nanowires.
The nanowire transistor manufacturing techniques described in U.S. Patent 7,701,428 could be used to create any semiconductor device type, and other electronic component types. Further, the techniques would be suitable for application in electrical systems, optical systems, consumer electronics, industrial electronics, wireless systems, space applications, or any other application. according to inventors Dave Stumbo and Stephen Empedocles. A wide range of semiconductor materials may be used to form nanowires.
The manufacturing techniques are also applicable to nanorods, nanotubes, and nanoribbons. It should further be appreciated that the manufacturing techniques could be used to create any semiconductor device type, and other electronic component types. Further, the techniques would be suitable for application in electrical systems, optical systems, consumer electronics, industrial electronics, wireless systems, space applications, or any other application.
Manufacturing techniques include chemical vapor deposition (CVD) techniques, such as plasma enhanced CVD (PECVD), low pressure CVD (LPCVD), atomic layer deposition (ALD), or rapid thermal CVD (RT-CVD), etc., by physical vapor deposition (PVD) (e.g., sputtering, e-evaporation), and by other thin film processing methods such as spin coating, vapor coating, immersion coating.
Nanosys also earned U.S. Patent 7,701,014 for gating configurations and improved contacts in nanowire-based electronic devices. The nanowires can be made in a completely low fabrication/assembly environment temperature (e.g., T<200.degree.) without sacrificing performance