In U.S. Patent 7,666,791, Nanosys, Inc. (Palo Alto, CA) inventors Shahriar Mostarshed Linda T. Romano disclose systems and methods for nanowire growth and harvesting. Methods for nanowire growth and doping were developed, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect, methods to improve nanowire quality through the use of sacrificial growth layers have also been created. Nanosys also developed methods for transferring nanowires from one substrate to another substrate.
Nanosys, Inc. also added U.S. Patent 7,667,296 for a nanowire capacitor and its manufacturing methods. David Stumbo, Jian Chen, David Heald, and Yaoling Pan invented the nanowire capacitor which includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion insulator and a contact coupled to the nanowire.
Nanosys also earned U.S. Patent 7,662,313 for structurally oriented nanostructures. The clusters of selectively-oriented nanostructures can be generated, for example, to provide an aggregation of functional elements such as junctions at defined locations on a substrate, e.g., for interfacing with additional nanoscale or microscale electronics according to inventors Jeffery A. Whiteford, Mihai Buretea, Erik Scher, Steve Empedocles and Andreas Meisel.
The latest two patents, granted on February 23rd,raises the total number of U.S. Patents assigned to Nanosys to 65.