When manufacturing semiconductor devices, there is a problem in that when the demand for accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern which exerts a bad influence on the system performance.
Hitachi Ltd. (Tokyo, JP) researchers overcame the problem by a procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components. The reaction number required for the change of molecule solubility is made constant and as large as possible. An acid generator is made of clathrate or combinatory n super molecules to make the acid catalyst concentration large.
As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nanometers, thereby realizing a high performance system, according to inventors Hiroshi Fukuda, Yoshiyuki Yokoyama, Takashi Hattori, Toshio Sakamizu, Tadashi Arai and Hiroshi Shiraishi in U.S. Patent 7,642,145.
According to Hitachi inventors, a semiconductor device may be made by forming a pattern by irradiating resist film with patterned radiation, the resist is constituted using, as main components, derivative molecules (desirably, average diameter is smaller than 2 nanometers) such as cyclodextrine having the defined molecular weight of 5000 or less including an acid generation group which produces an acid catalyst by irradiation of radiation and the defined number of reactive groups of 4 or more which produces polarity conversion reaction by the acid catalyst, calixarane, multi-nuclear phenol, dendrimer, fullerene, crown ether, androsteron derivative, silicon (Si) monomer origomer and the like.